Vol. 21, Issue 4, 2024October 01, 2024 EDT
Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C
Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C
Rommel, Mathias, Alexander May, Leander Baier, Julian Kauth, Norman Bottcher, and Michael Jank. 2024. “Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C.” Journal of Microelectronics and Electronic Packaging 21 (4): 73–79. https://doi.org/10.4071/001c.127390.