ISSN 1551-4897
Vol. 21, Issue 4, 2024October 01, 2024 EDT
Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C
Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C
Articles in Vol. 21, Issue 4, 2024
Vol. 21, Issue 4, 2024
- Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees CMathias RommelAlexander MayLeander BaierJulian KauthNorman BottcherMichael Jank
- Investigation of Cavity Fabrication Methods for Integrated Horn Antenna Structures in Low Temperature Cofired Ceramic (LTCC) SubstratesCathleen KleinholzBjorn MullerMichael FischerMarc DreissigackerOliver NallawegChristian TschobanKarl-Friedrich BeckerMartin Schneider-RamelowJens Muller
- Optimized Performance of Piezo-Driven Jet Actuator for Thixotropic Epoxies in Electronics AssemblySunny Agarwal
Rommel, Mathias, Alexander May, Leander Baier, Julian Kauth, Norman Bottcher, and Michael Jank. 2024. “Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550 Degrees C.” Journal of Microelectronics and Electronic Packaging 21 (4): 73–79. https://doi.org/10.4071/001c.127390.