Skip to main content
null
Journal of Microelectronics & Elect Pkg
  • Menu
  • Articles
    • General
    • Technical Article
    • All
  • For Authors
  • Editorial Board
  • About
  • Issues
  • IMAPSource Proceedings
  • search

RSS Feed

Enter the URL below into your favorite RSS reader.

http://localhost:13067/feed
Technical Article
Vol. 19, Issue 3, 2022September 01, 2022 EDT

GE SiC Semiconductor Device Operation at Extreme Temperatures

David Esler,
high temperatureharsh environmentinsulationMOSFETpower electronicssilicon carbide500C
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.1531475
Journal of Microelectronics & Elect Pkg
Esler, David. 2022. “GE SiC Semiconductor Device Operation at Extreme Temperatures.” Journal of Microelectronics and Electronic Packaging 19 (3): 83–88. https:/​/​doi.org/​10.4071/​imaps.1531475.
Save article as...▾

View more stats

This website uses cookies

We use cookies to enhance your experience and support COUNTER Metrics for transparent reporting of readership statistics. Cookie data is not sold to third parties or used for marketing purposes.

Powered by Scholastica, the modern academic journal management system