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ISSN 1551-4897
Technical Article
Vol. 19, Issue 3, 2022September 01, 2022 EDT

GE SiC Semiconductor Device Operation at Extreme Temperatures

David Esler,
high temperatureharsh environmentinsulationMOSFETpower electronicssilicon carbide500C
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.1531475
Journal of Microelectronics & Elect Pkg
Esler, David. 2022. “GE SiC Semiconductor Device Operation at Extreme Temperatures.” Journal of Microelectronics and Electronic Packaging 19 (3): 83–88. https:/​/​doi.org/​10.4071/​imaps.1531475.

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