ISSN 1551-4897
Vol. 19, Issue 3, 2022September 01, 2022 EDT
GE SiC Semiconductor Device Operation at Extreme Temperatures
GE SiC Semiconductor Device Operation at Extreme Temperatures
Articles in Vol. 19, Issue 3, 2022
Vol. 19, Issue 3, 2022
- GE SiC Semiconductor Device Operation at Extreme TemperaturesDavid Esler
- Numerical Simulation on the Warpage of Reconstructed Wafer During Encapsulation ProcessHu ZhenZhao WeiGu XiaoChen DongChen HaijieXu HongKim Hwee Tan
- Atomistic Modeling to Predict and Improve the Strength of Doped Sn-Cu Solder InterfacesMichael WoodcoxManuel Smeu
Esler, David. 2022. “GE SiC Semiconductor Device Operation at Extreme Temperatures.” Journal of Microelectronics and Electronic Packaging 19 (3): 83–88. https://doi.org/10.4071/imaps.1531475.