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Vol. 10, Issue 2, 2013April 01, 2013 EDT

Eutectic Zn-Al Die Attachment for Higher Tj SiC Power Applications: Fabrication Method and Die Shear Strength Reliability

Satoshi Tanimoto, Kohei Matsui, Yusuke Zushi, Shinji Sato, Yoshinori Murakami, Masato Takamori, Takashi Iseki,
Au-Geceramic substratedie attachmenthigh temperaturepower deviceSiC
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.373
Journal of Microelectronics & Elect Pkg
Tanimoto, Satoshi, Kohei Matsui, Yusuke Zushi, Shinji Sato, Yoshinori Murakami, Masato Takamori, and Takashi Iseki. 2013. “Eutectic Zn-Al Die Attachment for Higher Tj SiC Power Applications: Fabrication Method and Die Shear Strength Reliability.” Journal of Microelectronics and Electronic Packaging 10 (2): 59–66. https:/​/​doi.org/​10.4071/​imaps.373.
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