Vol. 10, Issue 2, 2013April 01, 2013 EDT
High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology
High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology
Grella, K., S. Dreiner, A. Schmidt, W. Heiermann, H. Kappert, H. Vogt, and U. Paschen. 2013. “High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology.” Journal of Microelectronics and Electronic Packaging 10 (2): 67–72. https://doi.org/10.4071/imaps.374.