Vol. 11, Issue 1, 2014January 01, 2014 EDT
Void Formation and Bond Strength Investigated for Wafer-Level Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonding
Void Formation and Bond Strength Investigated for Wafer-Level Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonding
Astrid-Sofie B. Vardøy, H. J. van de Wiel, Stian Martinsen, Greg R. Hayes, Hartmut R. Fischer, Knut E. Aasmundtveit, Adriana Lapadatu, Maaike M. V. Taklo,
Vardøy, Astrid-Sofie B., H. J. van de Wiel, Stian Martinsen, Greg R. Hayes, Hartmut R. Fischer, Knut E. Aasmundtveit, Adriana Lapadatu, and Maaike M. V. Taklo. 2014. “Void Formation and Bond Strength Investigated for Wafer-Level Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonding.” Journal of Microelectronics and Electronic Packaging 11 (1): 1–6. https://doi.org/10.4071/imaps.408.