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Vol. 11, Issue 1, 2014January 01, 2014 EDT

Void Formation and Bond Strength Investigated for Wafer-Level Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonding

Astrid-Sofie B. Vardøy, H. J. van de Wiel, Stian Martinsen, Greg R. Hayes, Hartmut R. Fischer, Knut E. Aasmundtveit, Adriana Lapadatu, Maaike M. V. Taklo,
Voidsshear strengthrobustnesshermetic wafer level bondingsolid-liquid interdiffusion (SLID)Cu-Sn
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.408
Journal of Microelectronics & Elect Pkg
Vardøy, Astrid-Sofie B., H. J. van de Wiel, Stian Martinsen, Greg R. Hayes, Hartmut R. Fischer, Knut E. Aasmundtveit, Adriana Lapadatu, and Maaike M. V. Taklo. 2014. “Void Formation and Bond Strength Investigated for Wafer-Level Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonding.” Journal of Microelectronics and Electronic Packaging 11 (1): 1–6. https:/​/​doi.org/​10.4071/​imaps.408.
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