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Vol. 10, Issue 4, 2013October 01, 2013 EDT

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

Christina DiMarino, Zheng Chen, Dushan Boroyevich, Rolando Burgos, Paolo Mattavelli,
Wide band gap semiconductorssilicon carbide (SiC)power semiconductorshigh-temperaturedevice characterization
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.393
Journal of Microelectronics & Elect Pkg
DiMarino, Christina, Zheng Chen, Dushan Boroyevich, Rolando Burgos, and Paolo Mattavelli. 2013. “High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices.” Journal of Microelectronics and Electronic Packaging 10 (4): 138–43. https:/​/​doi.org/​10.4071/​imaps.393.
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