Vol. 10, Issue 4, 2013October 01, 2013 EDT
High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
DiMarino, Christina, Zheng Chen, Dushan Boroyevich, Rolando Burgos, and Paolo Mattavelli. 2013. “High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices.” Journal of Microelectronics and Electronic Packaging 10 (4): 138–43. https://doi.org/10.4071/imaps.393.