Vol. 10, Issue 4, 2013October 01, 2013 EDT
Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology
Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology
Grella, K., S. Dreiner, H. Vogt, and U. Paschen. 2013. “Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology.” Journal of Microelectronics and Electronic Packaging 10 (4): 150–54. https://doi.org/10.4071/imaps.391.