Vol. 10, Issue 4, 2013October 01, 2013 EDT
A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits
A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits
Lanni, L., B. G. Malm, C.-M. Zetterling, and M. Östling. 2013. “A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits.” Journal of Microelectronics and Electronic Packaging 10 (4): 155–62. https://doi.org/10.4071/imaps.390.