ISSN 1551-4897
Vol. 18, Issue 4, 2021October 01, 2021 EDT
Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions
Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions
Duraij, Martijn S., Yudi Xiao, Gabriel Zsurzsan, and Zhe Zhang. 2021. “Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions.” Journal of Microelectronics and Electronic Packaging 18 (4): 168–76. https://doi.org/10.4071/imaps.1545724.