ISSN 1551-4897
Vol. 15, Issue 4, 2018October 01, 2018 EDT
Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits
Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yu Chen, and Carl W. Chang. 2018. “Year-Long 500°C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits.” Journal of Microelectronics and Electronic Packaging 15 (4): 163–70. https://doi.org/10.4071/imaps.729648.