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Vol. 15, Issue 4, 2018October 01, 2018 EDT

Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits

Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yu Chen, Carl W. Chang,
SiCJFETintegrated circuit
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.729648
Journal of Microelectronics & Elect Pkg
Neudeck, Philip G., David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yu Chen, and Carl W. Chang. 2018. “Year-Long 500°C Operational Demonstration of Up-Scaled 4H-SiC JFET Integrated Circuits.” Journal of Microelectronics and Electronic Packaging 15 (4): 163–70. https:/​/​doi.org/​10.4071/​imaps.729648.
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