ISSN 1551-4897
Vol. 10, Issue 4, 2013October 01, 2013 EDT
High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
Articles in Vol. 10, Issue 4, 2013
Vol. 10, Issue 4, 2013
- Tin Nanoparticle-Based Solder Paste for Low Temperature ProcessingAlfredo J. DiazDavid MaAlfred ZinnPedro O. Quintero
- High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor DevicesChristina DiMarinoZheng ChenDushan BoroyevichRolando BurgosPaolo Mattavelli
- Surface Characteristics of LTCC Substrates Fabricated by Pressure-Assisted SinteringBjoern BrandtTorsten Rabe
- Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS TechnologyK. GrellaS. DreinerH. VogtU. Paschen
- Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond InterconnectionsS. T. RichesC. JohnstonA. Lui
- A 4H-SiC Bipolar Technology for High-Temperature Integrated CircuitsL. LanniB. G. MalmC.-M. ZetterlingM. Östling
- Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body BiasingAlexander SchmidtHolger KappertRainer Kokozinski
DiMarino, Christina, Zheng Chen, Dushan Boroyevich, Rolando Burgos, and Paolo Mattavelli. 2013. “High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices.” Journal of Microelectronics and Electronic Packaging 10 (4): 138–43. https://doi.org/10.4071/imaps.393.