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ISSN 1551-4897
General
Vol. 10, Issue 4, 2013October 01, 2013 EDT

Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

S. T. Riches, C. Johnston, A. Lui,
Silicon-on-insulator deviceshigh temperature electronics packagingintermetallicswire bonding
Copyright Logoccby-nc-nd-4.0 • https://doi.org/10.4071/imaps.392

Articles in Vol. 10, Issue 4, 2013

Vol. 10, Issue 4, 2013
  • Tin Nanoparticle-Based Solder Paste for Low Temperature Processing
    Alfredo J. DiazDavid MaAlfred ZinnPedro O. Quintero
  • High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices
    Christina DiMarinoZheng ChenDushan BoroyevichRolando BurgosPaolo Mattavelli
  • Surface Characteristics of LTCC Substrates Fabricated by Pressure-Assisted Sintering
    Bjoern BrandtTorsten Rabe
  • Reliability Investigations up to 350°C of Gate Oxide Capacitors Realized in a Silicon-on-Insulator CMOS Technology
    K. GrellaS. DreinerH. VogtU. Paschen
  • Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections
    S. T. RichesC. JohnstonA. Lui
  • A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits
    L. LanniB. G. MalmC.-M. ZetterlingM. Östling
  • Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing
    Alexander SchmidtHolger KappertRainer Kokozinski
Journal of Microelectronics & Elect Pkg
Riches, S. T., C. Johnston, and A. Lui. 2013. “Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections.” Journal of Microelectronics and Electronic Packaging 10 (4): 163–70. https://doi.org/10.4071/imaps.392.
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