ISSN 1551-4897
Vol. 18, Issue 4, 2021October 01, 2021 EDT
Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions
Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions
Articles in Vol. 18, Issue 4, 2021
Vol. 18, Issue 4, 2021
- State-of-the-Art and Outlooks of Chiplets Heterogeneous Integration and Hybrid BondingJohn H Lau
- Designs for Reliability and Failure Mode Prevention of Electrical Feedthroughs in Integrated Downhole Logging ToolsHua XiaNelson SettlesMichael GrimmGaery RutherfordDavid DeWire
- Effect of High Temperature Storage on AC Characteristics of Polymer Tantalum CapacitorsAlexander Teverovsky
- Gallium-Nitride Field Effect Transistors in Extreme Temperature ConditionsMartijn S. DuraijYudi XiaoGabriel ZsurzsanZhe Zhang
- Measurement Capability of Laser Ultrasonic Inspection System for Evaluation of Ball-Grid Array Package Solder BallsVishnu V. B. ReddyJaimal WilliamsonSuresh K. Sitaraman
Duraij, Martijn S., Yudi Xiao, Gabriel Zsurzsan, and Zhe Zhang. 2021. “Gallium-Nitride Field Effect Transistors in Extreme Temperature Conditions.” Journal of Microelectronics and Electronic Packaging 18 (4): 168–76. https://doi.org/10.4071/imaps.1545724.