ISSN 1551-4897
Vol. 20, Issue 1, 2023January 01, 2023 EDT
AlGaN High Electron Mobility Transistor for High-Temperature Logic
AlGaN High Electron Mobility Transistor for High-Temperature Logic
Articles in Vol. 20, Issue 1, 2023
Vol. 20, Issue 1, 2023
- AlGaN High Electron Mobility Transistor for High-Temperature LogicB. A. KleinA. A. AllermanA. G. BacaC. D. NordquistA. M. ArmstrongM. Van HeukelomA. RiceV. PatelM. RosprimL. CaravelloR. DeBerryJ. R. PipkinV. M. AbateR. J. Kaplar
- Electromigration Risk Assessment and Circuit Optimization Using Innovative Multiphysics ModelingChongyang CaiZhi YangYuan LiPadam JainTerry KangKrishna Mellachervu
- Prevention of Cu Electrolytic Migration Defects on RDL by a Cu-Selective Passivation to Enhance ReliabilityAshish S. SalunkeJohn AlptekinKaushik AkulaSubiksha JayakumarShaurya KumarOliver Chyan
- A Physics-of-Failure Investigation of Flip Chip Reliability Based on Lead-Free Solder Fatigue ModelingSean BrinleeScott Popelar
- Study on CPI Behaviors of X Dimension Fan-Out Integration (XDFOI) PackagesHaijie ChenZhen HuMing HeJielei XieYaojian LinChoon Heung Lee
Klein, B. A., A. A. Allerman, A. G. Baca, C. D. Nordquist, A. M. Armstrong, M. Van Heukelom, A. Rice, et al. 2023. “AlGaN High Electron Mobility Transistor for High-Temperature Logic.” Journal of Microelectronics and Electronic Packaging 20 (1): 1–8. https://doi.org/10.4071/imaps.1832996.